3:30 pm Thursday, August 18, 2005
ICES Seminar: 2D semiconductor device simulations by WENO-Boltzmann schemes by Jose A. Carrillo (ICEA and Universidad Autonoma de Barcelona) in ACES 6.304
We review the recent developments and applications of high order accurate finite difference weighted essentially non-oscillatory (WENO) methods to compute charged particle transport in semiconductors. We will show the numerical simulation of transients for the 2D spatial Boltzmann transport equation (BTE) coupled with the Poisson equation modeling semiconductor devices such as the MESFET and MOSFET. We compare the simulation results with those obtained by a direct simulation Monte Carlo (DSMC) solver for the same geometry. The main goal of this work is to benchmark and clarify the implementation of boundary conditions for both, deterministic and the Monte Carlo numerical schemes modeling these devices, to explain the boundary singularities for both the electric field and mean velocities associated to the solution of the transport equation, and to demonstrate the overall excellent behavior of the deterministic code through the good agreement between the Monte Carlo results and the coarse grid results of the deterministic WENO-BTE scheme. Submitted by
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